Compare to existing ones AHP-technology provides such decisive advantages as:
Perfect quality and homogeneity of crystals along all directions not depending on diameter ---> yield up to 90%
Growth speed 5 mm\hour ---> higher productivity
possibility of growing unrestrictedly large diameters ---> new possibilities for industry
As a result we get more qualitative crystals at significantly lower prime-cost. Technology is patented and reliably protected with know-how.
Schematic diagram for growing crystals by the AHP-method and own engineered and made pilot growth set-up:
Specific features of AHP crystallization:
1. Maintaining constant during the whole growth run all crystallization conditions: growth rates, temperature gradients, melt overheating, melt flow velocity, v.
2. Laminar melt flow (v=10-5–10-1 cm /sec).
3. Flat melt-crystal interface.
4. Absence of striations.
5. Control of longitudinal distribution of composition (melt feeding procedure is realized at keff =1)
6. Control of lateral distribution of composition.
7. Quantitative description of heat and mass transfer processes.
Single crystals of Ge, CdZnTe, GaSb and GaInSb have been successfully grown using AHP-technology.
Quality and structure of grown crystals confirmed theoretical expectations.
Comparison between numerically calculated and experimentally measured longitudinal distribution of Te in GaSb 
Lateral distribution of Sb in germanium
Lateral distribution of composition of AHP GaInSb crystal